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Micron Technology 16JTF51264HZ-1G6M1 4GB
Panram International Corporation W4U2666PS-8GC19 8GB
比较
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Panram International Corporation W4U2666PS-8GC19 8GB
总分
Micron Technology 16JTF51264HZ-1G6M1 4GB
总分
Panram International Corporation W4U2666PS-8GC19 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
更快的写入速度,GB/s
9.0
8.7
测试中的平均数值
需要考虑的原因
Panram International Corporation W4U2666PS-8GC19 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
28
左右 -27% 更低的延时
更快的读取速度,GB/s
16.1
12.9
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Panram International Corporation W4U2666PS-8GC19 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
22
读取速度,GB/s
12.9
16.1
写入速度,GB/s
9.0
8.7
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2112
2633
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Panram International Corporation W4U2666PS-8GC19 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMT16GX4M2C3600C18 8GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Samsung M393B2G70BH0-CK0 16GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Kingston ACR512X64D3S13C9G 4GB
Kingston KF3200C20S4/8G 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK16GX4M2A2800C16 8GB
Kingston ACR16D3LS1KNG/4G 4GB
Samsung M471A2K43CB1-CRCR 16GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
PNY Electronics PNY 2GB
SK Hynix HMA82GU6CJR8N-VK 16GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK32GX4M2A2800C16 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Apacer Technology AQD-D4U8GN24-SE 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Panram International Corporation PUD43000C164G2NJK 4GB
Kingston HP32D4S2S1ME-4 4GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
报告一个错误
×
Bug description
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