Samsung M471B1G73EB0-YK0 8GB vs Crucial Technology CT8G4DFS6266.M4FE 8GB

总分

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

总分

Crucial Technology CT8G4DFS6266.M4FE 8GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

差异规格评论

差异

Samsung M471B1G73EB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73EB0-YK0 8GB

报告一个错误

Crucial Technology CT8G4DFS6266.M4FE 8GB

需要考虑的原因
Crucial Technology CT8G4DFS6266.M4FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 -64% 更低的延时
更快的读取速度，GB/s

17.3 12.2

测试中的平均数值
更快的写入速度，GB/s

13.4 7.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73EB0-YK0 8GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 28
读取速度，GB/s

12.2 17.3
写入速度，GB/s

7.9 13.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2072 3325

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C

A-DATA Technology AD4S320038G22-B 8GB

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