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Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M392A4K40BM0-CRC 32GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M392A4K40BM0-CRC 32GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    12.9 left arrow 10.8
    测试中的平均数值
Samsung M392A4K40BM0-CRC 32GB 需要考虑的原因
Samsung M392A4K40BM0-CRC 32GB
报告一个错误
  • 更快的写入速度，GB/s
    9.9 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M392A4K40BM0-CRC 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 32
  • 读取速度，GB/s
    12.9 left arrow 10.8
  • 写入速度，GB/s
    9.0 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2618

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Samsung M392A4K40BM0-CRC 32GB RAM的比较

A-DATA Technology DOVF1B163G2G 2GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M392A4K40BM0-CRC 32GB
Samsung M392A4K40BM0-CRC 32GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
Samsung M393B1K73DH0-CK0 8GB
Samsung M393B1K73DH0-CK0 8GB
G Skill Intl F4-3200C16-16GSXKB 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Apacer Technology 78.C1GMW.AUC0B 8GB
Apacer Technology 78.C1GMW.AUC0B 8GB
内存RAM
Corsair CMZ16GX3M2A1600C10 8GB
Corsair CMZ16GX3M2A1600C10 8GB
G Skill Intl F4-3000C14-16GTZ 16GB
G Skill Intl F4-3000C14-16GTZ 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMD16GX4M2K4133C19 8GB
Corsair CMD16GX4M2K4133C19 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905700-047.A00G 16GB
Kingston 9905700-047.A00G 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9965640-016.A00G 32GB
Kingston 9965640-016.A00G 32GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Apacer Technology 78.C2GF2.AU00B 8GB
Apacer Technology 78.C2GF2.AU00B 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM