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Micron Technology 16KTF1G64HZ-1G6E1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Micron Technology 16KTF1G64HZ-1G6E1 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

总分
star star star star star
Micron Technology 16KTF1G64HZ-1G6E1 8GB

Micron Technology 16KTF1G64HZ-1G6E1 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

差异 规格 评论

差异

Micron Technology 16KTF1G64HZ-1G6E1 8GB 需要考虑的原因
Micron Technology 16KTF1G64HZ-1G6E1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    12.4 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 7.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 46
    左右 -48% 更低的延时

规格

完整的技术规格清单
Micron Technology 16KTF1G64HZ-1G6E1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    46 left arrow 31
  • 读取速度，GB/s
    12.4 left arrow 11.2
  • 写入速度，GB/s
    8.1 left arrow 7.6
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2103 left arrow 2026

Micron Technology 16KTF1G64HZ-1G6E1 8GB RAM的比较

Kingston KVR16N11/8-SP 8GB
Samsung M471B1G73BH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB RAM的比较

SK Hynix HMT451S6BFR8A-PB 4GB
NXP (Philips) HMT351S6CFR8C-H9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 99U5702-101.A00G 8GB
Kingston 99U5702-101.A00G 8GB
内存RAM
Micron Technology 16KTF1G64HZ-1G6E1 8GB
Micron Technology 16KTF1G64HZ-1G6E1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905622-057.A00G 4GB
Kingston 9905622-057.A00G 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
SK Hynix HMA82GS6CJR8N-UH 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK16GX4M2K4400C19 8GB
Corsair CMK16GX4M2K4400C19 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-3200C16-16GTZA 16GB
G Skill Intl F4-3200C16-16GTZA 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2666C18-8GFX 8GB
G Skill Intl F4-2666C18-8GFX 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB
SK Hynix HMA82GS7AFR8N-UH 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-4600C18-8GTRS 8GB
G Skill Intl F4-4600C18-8GTRS 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
内存RAM