Micron Technology 16KTF1G64HZ-1G6E1 8GB vs Samsung M471B1G73BH0-YK0 8GB

总分

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Micron Technology 16KTF1G64HZ-1G6E1 8GB

总分

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

差异规格评论

差异

Micron Technology 16KTF1G64HZ-1G6E1 8GB

需要考虑的原因
Micron Technology 16KTF1G64HZ-1G6E1 8GB

报告一个错误

更快的读取速度，GB/s

12.4 12.1

测试中的平均数值
更快的写入速度，GB/s

8.1 7.6

测试中的平均数值

Samsung M471B1G73BH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73BH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 46

左右 -7% 更低的延时

规格

完整的技术规格清单

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Samsung M471B1G73BH0-YK0 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

46 43
读取速度，GB/s

12.4 12.1
写入速度，GB/s

8.1 7.6
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2103 2034

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

Crucial Technology CT8G3S160BM.M16FJD 8GB

Crucial Technology CT8G3S160BM.M16FJD 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

SpecTek Incorporated ?????????????????? 2GB

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Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-2400C15-8GTZR 8GB

G Skill Intl F4-2400C15-8GTZR 8GB

Kingston 99U5315-023.A00LF 512MB

Kingston 99U5315-023.A00LF 512MB

G Skill Intl F4-2800C18-8GRS 8GB

G Skill Intl F4-2800C18-8GRS 8GB

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston 9965640-015.A00G 32GB

Kingston 9965640-015.A00G 32GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMK32GX4M4C3333C16 8GB

Corsair CMK32GX4M4C3333C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C16-4GVK 4GB

G Skill Intl F4-3200C16-4GVK 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000