Micron Technology 16KTF1G64HZ-1G6E1 8GB vs Samsung M471B1G73BH0-YK0 8GB

Punteggio complessivo

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Punteggio complessivo

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Motivi da considerare
Micron Technology 16KTF1G64HZ-1G6E1 8GB

Velocità di lettura più elevata, GB/s

12.4 12.1

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.1 7.6

Valore medio nei test

Samsung M471B1G73BH0-YK0 8GB

Motivi da considerare
Samsung M471B1G73BH0-YK0 8GB

Al di sotto della latenza nei test PassMark, ns

43 46

Intorno -7% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Samsung M471B1G73BH0-YK0 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

46 43
Velocità di lettura, GB/s

12.4 12.1
Velocità di scrittura, GB/s

8.1 7.6
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

2103 2034

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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