Micron Technology 16KTF51264HZ-1G6M1 4GB vs Crucial Technology CT8G4SFD824A.C16FDD2 8GB

总分

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

差异规格评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB

报告一个错误

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FDD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 -59% 更低的延时
更快的读取速度，GB/s

14.8 10.6

测试中的平均数值
更快的写入速度，GB/s

11.2 6.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16KTF51264HZ-1G6M1 4GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 27
读取速度，GB/s

10.6 14.8
写入速度，GB/s

6.9 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1647 2426

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K43BB1-CRC 8GB

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Kingston KVR533D2N4 512MB

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Corsair CMD16GX4M4A2666C15 4GB

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G Skill Intl F4-3200C22-32GRS 32GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

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Micron Technology ILG8GS2400A 8GB

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Kingston 9965433-034.A00LF 4GB

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G Skill Intl F4-3200C14-32GTRG 32GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Corsair CMK32GX4M4B3000C15 8GB

Corsair CMK32GX4M4B3000C15 8GB