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Micron Technology 4ATF51264AZ-2G3B1 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB

总分
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Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

总分
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Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

差异 规格 评论

差异

Micron Technology 4ATF51264AZ-2G3B1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 48
    左右 29% 更低的延时
  • 更快的写入速度，GB/s
    11.2 left arrow 8.3
    测试中的平均数值
Micron Technology 4ATF51264AZ-3G2E1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-3G2E1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 15.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Micron Technology 4ATF51264AZ-2G3B1 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 48
  • 读取速度，GB/s
    15.6 left arrow 17.5
  • 写入速度，GB/s
    11.2 left arrow 8.3
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2468 left arrow 2196

Micron Technology 4ATF51264AZ-2G3B1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB

Micron Technology 4ATF51264AZ-3G2E1 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Micron Technology 4ATF51264AZ-2G3B1 4GB
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Micron Technology 4ATF51264AZ-3G2E1 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
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