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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Apacer Technology GD2.1542WS.001 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Apacer Technology GD2.1542WS.001 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Apacer Technology GD2.1542WS.001 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Apacer Technology GD2.1542WS.001 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
51
左右 -76% 更低的延时
更快的读取速度,GB/s
17.6
15.6
测试中的平均数值
更快的写入速度,GB/s
13.5
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Apacer Technology GD2.1542WS.001 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
29
读取速度,GB/s
15.6
17.6
写入速度,GB/s
11.8
13.5
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
3147
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Apacer Technology GD2.1542WS.001 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Apacer Technology GD2.1542WS.001 8GB
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PNY Electronics PNY 2GB
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Samsung M391B5673EH1-CH9 2GB
Corsair CM4X16GC3000C15K4 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMD16GX4M4B2133C10 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Crucial Technology CT25664AA800.M16FG 2GB
Corsair CMK8GX4M2B4200C19 4GB
报告一个错误
×
Bug description
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