Samsung M391B5673EH1-CH9 2GB vs Corsair CM4X16GC3000C15K4 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CM4X16GC3000C15K4 16GB

Corsair CM4X16GC3000C15K4 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时

Corsair CM4X16GC3000C15K4 16GB

需要考虑的原因
Corsair CM4X16GC3000C15K4 16GB

报告一个错误

更快的读取速度，GB/s

18.2 12.8

测试中的平均数值
更快的写入速度，GB/s

14.6 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CM4X16GC3000C15K4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

12.8 18.2
写入速度，GB/s

9.0 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3633

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Asgard VMA45UG-MEC1U2AW1 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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HT Micron HTH5AN8G8NCJR-VKD 8GB

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SK Hynix HMT425S6AFR6A-PB 2GB

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

Mushkin 996902 2GB

Mushkin 996902 2GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

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Kingston ACR16D3LS1KNG/4G 4GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB