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Samsung M393A1G40EB1-CRC 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB

Samsung M393A1G40EB1-CRC 8GB vs HT Micron HTH5AN8G8NCJR-VKD 8GB

总分
star star star star star
Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

总分
star star star star star
HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

差异 规格 评论

差异

Samsung M393A1G40EB1-CRC 8GB 需要考虑的原因
Samsung M393A1G40EB1-CRC 8GB
报告一个错误
HT Micron HTH5AN8G8NCJR-VKD 8GB 需要考虑的原因
HT Micron HTH5AN8G8NCJR-VKD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 52
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Samsung M393A1G40EB1-CRC 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 31
  • 读取速度，GB/s
    10.5 left arrow 15.7
  • 写入速度，GB/s
    7.7 left arrow 9.5
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2236 left arrow 2713

Samsung M393A1G40EB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

HT Micron HTH5AN8G8NCJR-VKD 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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