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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology CT4G4DFS8213.C8FHP 4GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Crucial Technology CT4G4DFS8213.C8FHP 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
13.2
测试中的平均数值
更快的写入速度,GB/s
11.8
6.2
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FHP 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
51
左右 -113% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
24
读取速度,GB/s
15.6
13.2
写入速度,GB/s
11.8
6.2
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
1845
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB RAM的比较
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3600C14-8GTZNB 8GB
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology DDR4 4133 2OZ 8GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Kingston 9905700-097.A00G 8GB
Samsung M471A1K43DB1-CWE 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3400C16-8GTZ 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
G Skill Intl F3-2133C9-4GAB 4GB
INTENSO 5641162 8GB
ASint Technology SSA302G08-EGN1C 4GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
AMD AE34G1601U1 4GB
Kingston 9905599-020.A00G 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston KHX2133C13S4/4G 4GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
Kingston 99U5474-038.A00LF 4GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
报告一个错误
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