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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
比较
Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
总分
Nanya Technology M2X4G64CB8HG9N-DG 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
36
左右 -50% 更低的延时
更快的读取速度,GB/s
15.6
14.9
测试中的平均数值
更快的写入速度,GB/s
12.1
9.5
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
24
读取速度,GB/s
14.9
15.6
写入速度,GB/s
9.5
12.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2292
2852
Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较
Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Samsung M395T2863QZ4-CF76 1GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
G Skill Intl F5-6400J3239G16G 16GB
Essencore Limited KD48GS88J-26N1900 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK16GX4M2B3200C16 8GB
Kingston 99U5474-038.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK16GX4M4B3866C18 4GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Corsair CMK64GX4M4C3333C16 16GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3000C16-16GTRS 16GB
报告一个错误
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Bug description
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