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Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3600C18-16GTRG 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
G Skill Intl F4-3600C18-16GTRG 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C18-16GTRG 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
51
左右 -82% 更低的延时
更快的读取速度,GB/s
18
15.6
测试中的平均数值
更快的写入速度,GB/s
16.8
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
28
读取速度,GB/s
15.6
18.0
写入速度,GB/s
11.8
16.8
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
3889
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C18-16GTRG 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMR32GX4M2F3600C18 16GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-4000C19-16GTRS 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
G Skill Intl F5-5600J4040C16G 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8
V-GEN D4H8GL36A8TXV 8GB
G Skill Intl F5-6400J3239G16G 16GB
V-Color Technology Inc. TA48G36S818BNK 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
A-DATA Technology ADOVE1A0834E 1GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
报告一个错误
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