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Micron Technology 8ATF51264AZ-2G1B1 4GB
Avant Technology W642GU44J2320NC 16GB

Micron Technology 8ATF51264AZ-2G1B1 4GB vs Avant Technology W642GU44J2320NC 16GB

总分
star star star star star
Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

总分
star star star star star
Avant Technology W642GU44J2320NC 16GB

Avant Technology W642GU44J2320NC 16GB

差异 规格 评论

差异

Micron Technology 8ATF51264AZ-2G1B1 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 32
    左右 9% 更低的延时
Avant Technology W642GU44J2320NC 16GB 需要考虑的原因
Avant Technology W642GU44J2320NC 16GB
报告一个错误
  • 更快的读取速度，GB/s
    19.5 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 11.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51 更高的带宽

规格

完整的技术规格清单
Micron Technology 8ATF51264AZ-2G1B1 4GB
Avant Technology W642GU44J2320NC 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 32
  • 读取速度，GB/s
    15.8 left arrow 19.5
  • 写入速度，GB/s
    11.8 left arrow 14.6
  • 内存带宽，mbps
    17000 left arrow 25600
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2711 left arrow 3572

Micron Technology 8ATF51264AZ-2G1B1 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Avant Technology W642GU44J2320NC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Avant Technology W642GU44J2320NC 16GB
Avant Technology W642GU44J2320NC 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-2666C18-32GVK 32GB
G Skill Intl F4-2666C18-32GVK 32GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3200C15-8GVK 8GB
G Skill Intl F4-3200C15-8GVK 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Mushkin 99[2/7/4]208F 8GB
Mushkin 99[2/7/4]208F 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M471A1K1KBB0-CPB 8GB
Samsung M471A1K1KBB0-CPB 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Gloway International (HK) STK2133C15-8GB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston LV32D4U2S8HD-8X 8GB
Kingston LV32D4U2S8HD-8X 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Jinyu CL16-16-16 D4-2400 8GB
Jinyu CL16-16-16 D4-2400 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avant Technology W6451U48J7240N6 4GB
Avant Technology W6451U48J7240N6 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMW16GX4M1D3000C16 16GB
Corsair CMW16GX4M1D3000C16 16GB
内存RAM