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Micron Technology 8KTF51264HZ-1G6E1 4GB
G Skill Intl F4-2666C15-8GVB 8GB

Micron Technology 8KTF51264HZ-1G6E1 4GB vs G Skill Intl F4-2666C15-8GVB 8GB

总分
star star star star star
Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

总分
star star star star star
G Skill Intl F4-2666C15-8GVB 8GB

G Skill Intl F4-2666C15-8GVB 8GB

差异 规格 评论

差异

Micron Technology 8KTF51264HZ-1G6E1 4GB 需要考虑的原因
Micron Technology 8KTF51264HZ-1G6E1 4GB
报告一个错误
G Skill Intl F4-2666C15-8GVB 8GB 需要考虑的原因
G Skill Intl F4-2666C15-8GVB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 46
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Micron Technology 8KTF51264HZ-1G6E1 4GB
G Skill Intl F4-2666C15-8GVB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 30
  • 读取速度，GB/s
    12.0 left arrow 17.7
  • 写入速度，GB/s
    7.5 left arrow 11.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1959 left arrow 3119

Micron Technology 8KTF51264HZ-1G6E1 4GB RAM的比较

Micron Technology 8KTF51264HZ-1G9P1 4GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB

G Skill Intl F4-2666C15-8GVB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1K43DB2-CTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2133C15-16GFX 16GB
G Skill Intl F4-2133C15-16GFX 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
内存RAM
Micron Technology 8KTF51264HZ-1G6E1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
G Skill Intl F4-2666C15-8GVB 8GB
G Skill Intl F4-2666C15-8GVB 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Avant Technology W641GU48J7240ND 8GB
Avant Technology W641GU48J7240ND 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Kingston KHX4800C19D4/8GX 8GB
Kingston KHX4800C19D4/8GX 8GB
内存RAM
Ramaxel Technology RMT3170EF68F9W1600 4GB
Ramaxel Technology RMT3170EF68F9W1600 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Apacer Technology GD2.1527WC.001 8GB
Apacer Technology GD2.1527WC.001 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM