Micron Technology 8KTF51264HZ-1G6E1 4GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB

总分

Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

总分

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

差异规格评论

差异

Micron Technology 8KTF51264HZ-1G6E1 4GB

需要考虑的原因
Micron Technology 8KTF51264HZ-1G6E1 4GB

报告一个错误

Micron Technology 4ATF1G64HZ-3G2B2 8GB

需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2B2 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 46

左右 -18% 更低的延时
更快的读取速度，GB/s

16.1 12

测试中的平均数值
更快的写入速度，GB/s

11.9 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 39
读取速度，GB/s

12.0 16.1
写入速度，GB/s

7.5 11.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1959 2782

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

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Neo Forza NMUD480E82-3600 8GB

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Samsung M471B1G73DB0-YK0 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F4-3600C17-8GTZR 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

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Avant Technology F641GU67F9333G 8GB

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Kingston 9905701-010.A00G 16GB