Micron Technology MTA8ATF1G64HZ-2G3A1 8GB vs Samsung M471A1K43CB1-CTD 8GB

总分

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

总分

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

差异规格评论

差异

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 24% 更低的延时

Samsung M471A1K43CB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43CB1-CTD 8GB

报告一个错误

更快的读取速度，GB/s

15.8 14.3

测试中的平均数值
更快的写入速度，GB/s

11.9 10.7

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Samsung M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

25 33
读取速度，GB/s

14.3 15.8
写入速度，GB/s

10.7 11.9
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2583 2824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFS832A.M8FE 16GB

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Kingston MSI16D3LS1MNG/8G 8GB

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G Skill Intl F4-3300C16-16GTZSW 16GB

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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

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Samsung M471A1K43CB1-CTD 8GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Avant Technology F6451U64F9333G 4GB

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Kingston KHX1600C9S3L/4G 4GB

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Kingston 9905678-058.A00G 4GB

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A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB