Mushkin 991586 2GB vs Crucial Technology CT8G4SFD8213.C16FBR2 8GB

总分

Mushkin 991586 2GB

Mushkin 991586 2GB

总分

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

差异规格评论

差异

Mushkin 991586 2GB

需要考虑的原因
Mushkin 991586 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBR2 8GB

报告一个错误

更快的读取速度，GB/s

17.1 13.8

测试中的平均数值
更快的写入速度，GB/s

11.4 7.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991586 2GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

13.8 17.1
写入速度，GB/s

7.9 11.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2156 2903

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D30AESCK.M8FE 8GB

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Kingston ACR26D4U9S8MH-8 8GB

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PNY Electronics PNY 2GB

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A-DATA Technology VDQVE1B16 2GB

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Samsung M393A1G43DB0-CPB 8GB

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Samsung M378A5143DB0-CPB 4GB

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Kingston ACR26D4U9D8ME-16 16GB

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Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-2400C15-4GRK 4GB

G Skill Intl F4-2400C15-4GRK 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Kingston KCRXJ6-MIE 16GB

Kingston KCRXJ6-MIE 16GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB