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Mushkin 991679ES 996679ES 2GB
Samsung V-GeN D4S8GL26A8TL5 8GB

Mushkin 991679ES 996679ES 2GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

总分
star star star star star
Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分
star star star star star
Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

差异 规格 评论

差异

Mushkin 991679ES 996679ES 2GB 需要考虑的原因
Mushkin 991679ES 996679ES 2GB
报告一个错误
Samsung V-GeN D4S8GL26A8TL5 8GB 需要考虑的原因
Samsung V-GeN D4S8GL26A8TL5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 63
    左右 -186% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 7.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Mushkin 991679ES 996679ES 2GB
Samsung V-GeN D4S8GL26A8TL5 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 22
  • 读取速度，GB/s
    7.7 left arrow 18.0
  • 写入速度，GB/s
    5.0 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1130 left arrow 3110

Mushkin 991679ES 996679ES 2GB RAM的比较

Kingston 9905403-084.A01LF 2GB
Corsair CM4X8GF2666C16K8 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3000C15-8GVKB 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMU32GX4M4A2666C16 8GB
Corsair CMU32GX4M4A2666C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
A-DATA Technology AD4S320038G22-B 8GB
A-DATA Technology AD4S320038G22-B 8GB
内存RAM
Kingston 9905471-054.A00LF 8GB
Kingston 9905471-054.A00LF 8GB
Kingston 9905711-035.A00G 8GB
Kingston 9905711-035.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Crucial Technology BL8G26C16U4B.8FD 8GB
内存RAM