Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMU32GX4M4A2666C16 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Corsair CMU32GX4M4A2666C16 8GB

Corsair CMU32GX4M4A2666C16 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.7

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.0

测试中的平均数值

Corsair CMU32GX4M4A2666C16 8GB

需要考虑的原因
Corsair CMU32GX4M4A2666C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 77

左右 -175% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMU32GX4M4A2666C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 28
读取速度，GB/s

3,405.2 17.7
写入速度，GB/s

2,622.0 14.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3428

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-2800C16-8GVG 8GB

G Skill Intl F4-2800C16-8GVG 8GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Corsair CMT64GX5M2B5200C40 32GB

Corsair CMT64GX5M2B5200C40 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Essencore Limited IM44GU48N26-FFFHM 4GB

Essencore Limited IM44GU48N26-FFFHM 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Avant Technology W642GU44J2320NC 16GB

Avant Technology W642GU44J2320NC 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3600C16-8GTRG 8GB

G Skill Intl F4-3600C16-8GTRG 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F4-3200C14-32GTRG 32GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-3600C16-16GVKC 16GB

G Skill Intl F4-3600C16-16GVKC 16GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Panram International Corporation PUD43000C158G2NJK 8GB

Panram International Corporation PUD43000C158G2NJK 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Samsung 9905599-020.A00G 16GB

Samsung 9905599-020.A00G 16GB