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Nanya Technology M2F8G64CB8HB5N-DI 8GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB

Nanya Technology M2F8G64CB8HB5N-DI 8GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HB5N-DI 8GB

Nanya Technology M2F8G64CB8HB5N-DI 8GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HB5N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HB5N-DI 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 13.9
    测试中的平均数值
Micron Technology 16ATF2G64HZ-2G1B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 40
    左右 -11% 更低的延时
  • 更快的写入速度，GB/s
    10.1 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 36
  • 读取速度，GB/s
    14.7 left arrow 13.9
  • 写入速度，GB/s
    9.5 left arrow 10.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2486 left arrow 2581

Nanya Technology M2F8G64CB8HB5N-DI 8GB RAM的比较

Corsair CMW32GX4M2Z3600C18 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HB5N-DI 8GB
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3000C16-8GRS 8GB
G Skill Intl F4-3000C16-8GRS 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston KHX2666C13D4/4GX 4GB
Kingston KHX2666C13D4/4GX 4GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
内存RAM
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Essencore Limited IM48GU48N21-FFFHM 8GB
Essencore Limited IM48GU48N21-FFFHM 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3800C14-16GTZN 16GB
G Skill Intl F4-3800C14-16GTZN 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston KHX2133C13S4/8G 8GB
Kingston KHX2133C13S4/8G 8GB
内存RAM