Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Crucial Technology BLS16G4D30AESC.M16FE 16GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

Crucial Technology BLS16G4D30AESC.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

17.4 13.9

测试中的平均数值
更快的写入速度，GB/s

13.1 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

13.9 17.4
写入速度，GB/s

8.6 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2395 3437

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-4400C19-32GTRS 32GB

G Skill Intl F4-4400C19-32GTRS 32GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-3200C16-16GSXFB 16GB

G Skill Intl F4-3200C16-16GSXFB 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Essencore Limited IM44GU48N28-GGGHM 4GB

Essencore Limited IM44GU48N28-GGGHM 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-2666C19-8GIS 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB