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Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2800C15-4GTZ 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs G Skill Intl F4-2800C15-4GTZ 4GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
G Skill Intl F4-2800C15-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-2800C15-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 37
    左右 -76% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2800C15-4GTZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 21
  • 读取速度，GB/s
    13.9 left arrow 18.0
  • 写入速度，GB/s
    8.6 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 2769

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

G Skill Intl F4-2800C15-4GTZ 4GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2800C15-4GTZ 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Apacer Technology 78.BAGSR.4030B 4GB
Apacer Technology 78.BAGSR.4030B 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CM4X8GF2666C16K4 8GB
Corsair CM4X8GF2666C16K4 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965662-008.A01G 16GB
Kingston 9965662-008.A01G 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CMT16GX4M2C3600C18 8GB
Corsair CMT16GX4M2C3600C18 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston 9905625-152.A00G 16GB
Kingston 9905625-152.A00G 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Corsair CM4X8GF2666C16K8 8GB
Corsair CM4X8GF2666C16K8 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-2400C16-8GFXR 8GB
G Skill Intl F4-2400C16-8GFXR 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
V-GEN D4H8GS24A8 8GB
V-GEN D4H8GS24A8 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Corsair CM3X4GSD1066 4GB
Corsair CM3X4GSD1066 4GB
Kingston 9905630-066.A00G 16GB
Kingston 9905630-066.A00G 16GB
内存RAM