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Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3000C14-16GTZ 16GB
比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs G Skill Intl F4-3000C14-16GTZ 16GB
总分
Nanya Technology M2F8G64CB8HC9N-DI 8GB
总分
G Skill Intl F4-3000C14-16GTZ 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3000C14-16GTZ 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
37
左右 -19% 更低的延时
更快的读取速度,GB/s
17.5
13.9
测试中的平均数值
更快的写入速度,GB/s
13.6
8.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3000C14-16GTZ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
31
读取速度,GB/s
13.9
17.5
写入速度,GB/s
8.6
13.6
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2395
3371
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
G Skill Intl F4-3000C14-16GTZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905471-071.A00LF 8GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Kingston 9965516-049.A00LF 8GB
G Skill Intl F4-2666C15-16GVK 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9965589-037.D00G 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2933C16-16GFX 16GB
SK Hynix HMT425S6AFR6A-PB 2GB
G Skill Intl F4-2400C16-8GIS 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR26D4U9S8MH-8 8GB
Kingston 9965433-034.A00LF 4GB
Samsung M471A2G43BB2-CWE 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
A-DATA Technology DOVF1B163G2G 2GB
Apacer Technology 78.B1GQB.4010B 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
报告一个错误
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Bug description
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