Nanya Technology M2F8G64CB8HC9N-DI 8GB vs JUHOR JHD2666U1908JG 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

JUHOR JHD2666U1908JG 8GB

JUHOR JHD2666U1908JG 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 10% 更低的延时
更快的读取速度，GB/s

13.9 12.5

测试中的平均数值

JUHOR JHD2666U1908JG 8GB

需要考虑的原因
JUHOR JHD2666U1908JG 8GB

报告一个错误

更快的写入速度，GB/s

9.1 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

JUHOR JHD2666U1908JG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 41
读取速度，GB/s

13.9 12.5
写入速度，GB/s

8.6 9.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2395 2417

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273EB0-CK0 4GB

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SK Hynix HMAA1GU6CJR6N-XN 8GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Corsair CMU32GX4M4C3000C16 8GB

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Kingston 39P5429-006.AO01 2GB

SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB