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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CM4B16G1L3200K18K2 16GB
比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Corsair CM4B16G1L3200K18K2 16GB
总分
Nanya Technology M2N1G64TUH8D5F-AC 1GB
总分
Corsair CM4B16G1L3200K18K2 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
更快的读取速度,GB/s
2
17.7
测试中的平均数值
需要考虑的原因
Corsair CM4B16G1L3200K18K2 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
92
左右 -241% 更低的延时
更快的写入速度,GB/s
15.5
1,266.1
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CM4B16G1L3200K18K2 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
92
27
读取速度,GB/s
2,105.4
17.7
写入速度,GB/s
1,266.1
15.5
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
339
3798
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
Corsair CM4B16G1L3200K18K2 16GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SpecTek Incorporated ?????????????????? 2GB
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CM4B16G1L3200K18K2 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 16ATF2G64HZ-2G3B1 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMR32GX4M2A2666C16 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Kingston 9905471-006.A00LF 4GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Apacer Technology 78.01G86.9H50C 1GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
报告一个错误
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Bug description
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