Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology CT4G4DFS8266.C8FG 4GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Crucial Technology CT4G4DFS8266.C8FG 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 15.8

测试中的平均数值

Crucial Technology CT4G4DFS8266.C8FG 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FG 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 92

左右 -217% 更低的延时
更快的写入速度，GB/s

9.9 1,266.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 29
读取速度，GB/s

2,105.4 15.8
写入速度，GB/s

1,266.1 9.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

339 2384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

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PUSKILL DDR3 1600 8G 8GB

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Kingston KVR533D2N4 512MB

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Essencore Limited KD48GU88C-26N1600 8GB

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SK Hynix HYMP125S64CP8-S6 2GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 9905744-023.A00G 16GB

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Samsung M471B5173QH0-YK0 4GB

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InnoDisk Corporation M4S0-AGS1O5IK 16GB

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Corsair CMW64GX4M4Z2933C16 16GB

Corsair CMW64GX4M4Z2933C16 16GB