Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-3600C17-8GTZSW 8GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

G Skill Intl F4-3600C17-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 92

左右 -441% 更低的延时
更快的读取速度，GB/s

21.6 2

测试中的平均数值
更快的写入速度，GB/s

17.7 1,266.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-3600C17-8GTZSW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 17
读取速度，GB/s

2,105.4 21.6
写入速度，GB/s

1,266.1 17.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

339 3702

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C16-16GTZRA 16GB

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-3600C16-8GTZKW 8GB

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Kingston 9905403-134.A00LF 2GB

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Kingston 9905702-150.A00G 8GB

Kingston 9905702-150.A00G 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston ACR26D4U9S1KA-4 4GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

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Kingston 9905624-004.A00G 4GB