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Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-4000C19-8GTZSW 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-4000C19-8GTZSW 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
G Skill Intl F4-4000C19-8GTZSW 8GB

G Skill Intl F4-4000C19-8GTZSW 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 19.4
    测试中的平均数值
G Skill Intl F4-4000C19-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-4000C19-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 92
    左右 -254% 更低的延时
  • 更快的写入速度，GB/s
    15.5 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-4000C19-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 26
  • 读取速度，GB/s
    2,105.4 left arrow 19.4
  • 写入速度，GB/s
    1,266.1 left arrow 15.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 3515

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

G Skill Intl F4-4000C19-8GTZSW 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-4000C19-8GTZSW 8GB
G Skill Intl F4-4000C19-8GTZSW 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905701-010.A00G 16GB
Kingston 9905701-010.A00G 16GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3333C16-8GTZ 8GB
G Skill Intl F4-3333C16-8GTZ 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Kingston HP32D4U8S8ME-8XR 8GB
Kingston HP32D4U8S8ME-8XR 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905678-139.A00G 8GB
Kingston 9905678-139.A00G 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Essencore Limited KD48GS88A-26N1600 8GB
Essencore Limited KD48GS88A-26N1600 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2666C15-4GVK 4GB
G Skill Intl F4-2666C15-4GVK 4GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3200C14-8GVK 8GB
G Skill Intl F4-3200C14-8GVK 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9905711-015.A00G 4GB
Kingston 9905711-015.A00G 4GB
内存RAM