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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905598-044.A00G 16GB
比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Kingston 9905598-044.A00G 16GB
总分
Nanya Technology M2N1G64TUH8D5F-AC 1GB
总分
Kingston 9905598-044.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
更快的读取速度,GB/s
2
15.7
测试中的平均数值
需要考虑的原因
Kingston 9905598-044.A00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
92
左右 -268% 更低的延时
更快的写入速度,GB/s
8.7
1,266.1
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905598-044.A00G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
92
25
读取速度,GB/s
2,105.4
15.7
写入速度,GB/s
1,266.1
8.7
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
339
2609
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
Kingston 9905598-044.A00G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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V-GEN D4H4GL26A8TS5 4GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3600C19-8GSXK 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMW16GX4M2E3200C16 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMU32GX4M2C3200C16 16GB
Samsung M471B5273CH0-CH9 4GB
Samsung M393A4K40BB0-CPB 32GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Kingston K531R8-MIN 4GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Kingston KF552C40-16 16GB
报告一个错误
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Bug description
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