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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Micron Technology 8ATF2G64HZ-3G2E1 16GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.7
    测试中的平均数值
Micron Technology 8ATF2G64HZ-3G2E1 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 92
    左右 -163% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 35
  • 读取速度，GB/s
    2,105.4 left arrow 15.7
  • 写入速度，GB/s
    1,266.1 left arrow 12.1
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    339 left arrow 3045

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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PUSKILL DDR3 1600 8G 8GB
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Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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内存RAM
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内存RAM
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