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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 9ASF51272PZ-2G1AX 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
Micron Technology 9ASF51272PZ-2G1AX 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G1AX 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 92
    左右 -136% 更低的延时
  • 更快的读取速度，GB/s
    7.7 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.8 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 39
  • 读取速度，GB/s
    2,105.4 left arrow 7.7
  • 写入速度，GB/s
    1,266.1 left arrow 6.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 1768

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Micron Technology 9ASF51272PZ-2G1AX 4GB RAM的比较

Crucial Technology CT2K102464BD160B 8GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Kingston K531R8-MIN 4GB
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G Skill Intl F4-3200C15-4GRKD 4GB
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Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
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Kingston 9905403-011.A03LF 2GB
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内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
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Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
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Micron Technology 4ATS1G64HZ-2G3B1 8GB
内存RAM
Elpida EBJ41UF8BDW0-GN-F 4GB
Elpida EBJ41UF8BDW0-GN-F 4GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
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Crucial Technology BL16G36C16U4BL.M8FB1 16GB
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
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Crucial Technology BL16G26C16S4B.16FD 16GB
内存RAM
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Kingston 99U5474-010.A00LF 2GB
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Kingston 9905701-020.A00G 16GB
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