Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Patriot Memory (PDP Systems) 2800 C16 Series 8GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 16.5

测试中的平均数值

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 2800 C16 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 92

左右 -179% 更低的延时
更快的写入速度，GB/s

11.4 1,266.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 33
读取速度，GB/s

2,105.4 16.5
写入速度，GB/s

1,266.1 11.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

339 2913

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Crucial Technology CT102464BF160B.C16 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Micron Technology 16ATF2G64AZ-2G3H1 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

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Crucial Technology CT8G4DFS632A.M4FB 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Essencore Limited KD4AGU880-36A180X 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-4133C19-8GTZA 8GB

G Skill Intl F4-4133C19-8GTZA 8GB