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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M393A2G40DBD-CP1???? 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Samsung M393A2G40DBD-CP1???? 16GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Samsung M393A2G40DBD-CP1???? 16GB

Samsung M393A2G40DBD-CP1???? 16GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
Samsung M393A2G40DBD-CP1???? 16GB 需要考虑的原因
Samsung M393A2G40DBD-CP1???? 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 92
    左右 -171% 更低的延时
  • 更快的读取速度，GB/s
    9.6 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    5.8 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M393A2G40DBD-CP1???? 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 34
  • 读取速度，GB/s
    2,105.4 left arrow 9.6
  • 写入速度，GB/s
    1,266.1 left arrow 5.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 1839

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Samsung M393A2G40DBD-CP1???? 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Jinyu 16GB
Jinyu 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M393A2G40DBD-CP1???? 16GB
Samsung M393A2G40DBD-CP1???? 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
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Corsair CMY8GX3M2A2666C10 4GB
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Corsair CMT64GX4M8C3200C16 8GB
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Corsair CMSO16GX4M1A2133C15 16GB
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Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Patriot Memory (PDP Systems) PSD416G26662S 16GB
内存RAM
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内存RAM
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AMD R538G1601U2S-UO 8GB
Micron Technology AFLD44EK2P 4GB
Micron Technology AFLD44EK2P 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Corsair CMK64GX4M4A2400C14 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Crucial Technology CT8G4SFS632A.M4FE 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
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Corsair CMK64GX4M8A2400C14 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
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