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Nanya Technology M2S4G64CB8HG5N-DI 4GB
Crucial Technology BL16G32C16U4B.16FE 16GB

Nanya Technology M2S4G64CB8HG5N-DI 4GB vs Crucial Technology BL16G32C16U4B.16FE 16GB

总分
star star star star star
Nanya Technology M2S4G64CB8HG5N-DI 4GB

Nanya Technology M2S4G64CB8HG5N-DI 4GB

总分
star star star star star
Crucial Technology BL16G32C16U4B.16FE 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

差异 规格 评论

差异

Nanya Technology M2S4G64CB8HG5N-DI 4GB 需要考虑的原因
Nanya Technology M2S4G64CB8HG5N-DI 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
Crucial Technology BL16G32C16U4B.16FE 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4B.16FE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    20 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2S4G64CB8HG5N-DI 4GB
Crucial Technology BL16G32C16U4B.16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    13.0 left arrow 20.0
  • 写入速度，GB/s
    9.3 left arrow 15.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2031 left arrow 3713

Nanya Technology M2S4G64CB8HG5N-DI 4GB RAM的比较

Kingston KVR16N11/8-SP 8GB
SK Hynix HMA82GR8AMR4N-TF 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB RAM的比较

Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Golden Empire CL18-20-20 D4-3200 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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