RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology M2X4G64CB8HG5N-DG 4GB
INTENSO M418039 8GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB vs INTENSO M418039 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

总分
star star star star star
INTENSO M418039 8GB

INTENSO M418039 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG5N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.7 left arrow 7.4
    测试中的平均数值
INTENSO M418039 8GB 需要考虑的原因
INTENSO M418039 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 39
    左右 -95% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 13.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG5N-DG 4GB
INTENSO M418039 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 20
  • 读取速度，GB/s
    13.7 left arrow 16.0
  • 写入速度，GB/s
    9.7 left arrow 7.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2431 left arrow 2414

Nanya Technology M2X4G64CB8HG5N-DG 4GB RAM的比较

Samsung M378B5673EH1-CF8 2GB
AMD R538G1601U2S 8GB

INTENSO M418039 8GB RAM的比较

Crucial Technology CT2K102464BD160B 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
INTENSO M418039 8GB
INTENSO M418039 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Apacer Technology 78.BAGP4.AR50C 4GB
Apacer Technology 78.BAGP4.AR50C 4GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Kingston RB24D4U7S8MB-8 8GB
Kingston RB24D4U7S8MB-8 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CM4X8GF2400C16K4 8GB
Corsair CM4X8GF2400C16K4 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 9965640-008.A01G 32GB
Kingston 9965640-008.A01G 32GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M474A2K43BB1-CRC 16GB
Samsung M474A2K43BB1-CRC 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMK8GX4M2D2666C16 4GB
Corsair CMK8GX4M2D2666C16 4GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Samsung M471A1G43DB0-0-B 8GB
Samsung M471A1G43DB0-0-B 8GB
内存RAM
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
G Skill Intl F4-3000C16-16GISB 16GB
G Skill Intl F4-3000C16-16GISB 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
Kingston KHX2400C14S4/16G 16GB
Kingston KHX2400C14S4/16G 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Kingston 99U5713-003.A00G 4GB
Kingston 99U5713-003.A00G 4GB
内存RAM