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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Apacer Technology 78.C1GQB.4032B 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Apacer Technology 78.C1GQB.4032B 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.C1GQB.4032B 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
Apacer Technology 78.C1GQB.4032B 8GB 需要考虑的原因
Apacer Technology 78.C1GQB.4032B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 36
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Apacer Technology 78.C1GQB.4032B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 30
  • 读取速度，GB/s
    14.9 left arrow 17.5
  • 写入速度，GB/s
    9.5 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 3205

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Apacer Technology 78.C1GQB.4032B 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Apacer Technology 78.C1GQB.4032B 8GB
Apacer Technology 78.C1GQB.4032B 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMW16GX4M2A2666C16 8GB
Corsair CMW16GX4M2A2666C16 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
内存RAM
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
内存RAM
Corsair CM3B4G2C1600L9 4GB
Corsair CM3B4G2C1600L9 4GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CM4X8GE2666C16K4 8GB
Corsair CM4X8GE2666C16K4 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905630-018.A00G 8GB
Kingston 9905630-018.A00G 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
DSL Memory D4SS12081SH21A-A 4GB
DSL Memory D4SS12081SH21A-A 4GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Mushkin MR[A/B]280HHHH16G 16GB
Mushkin MR[A/B]280HHHH16G 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M393A2K43BB1-CRC 16GB
Samsung M393A2K43BB1-CRC 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-2400C15Z8GNT 8GB
G Skill Intl F4-2400C15Z8GNT 8GB
内存RAM