Samsung M3 93T5750CZA-CE6 2GB vs SK Hynix HMA41GR7BJR4N-UH 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 12.5

测试中的平均数值

SK Hynix HMA41GR7BJR4N-UH 8GB

需要考虑的原因
SK Hynix HMA41GR7BJR4N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 77

左右 -166% 更低的延时
更快的写入速度，GB/s

9.7 2,622.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

SK Hynix HMA41GR7BJR4N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 29
读取速度，GB/s

3,405.2 12.5
写入速度，GB/s

2,622.0 9.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 2609

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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SK Hynix V-GeN D4H8GL26A8TX5 8GB

Kingston 99U5584-017.A00LF 4GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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Crucial Technology CT16G4DFS8266.C8FE 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-3333C16-16GTZSW 16GB

G Skill Intl F4-3333C16-16GTZSW 16GB