Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Crucial Technology CT16G4SFD832A.C16FP 16GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

Crucial Technology CT16G4SFD832A.C16FP 16GB

需要考虑的原因
Crucial Technology CT16G4SFD832A.C16FP 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 36

左右 -6% 更低的延时
更快的读取速度，GB/s

16.6 14.9

测试中的平均数值
更快的写入速度，GB/s

14.3 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 34
读取速度，GB/s

14.9 16.6
写入速度，GB/s

9.5 14.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2292 3282

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DDR3 1333G 2GB

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Crucial Technology CT16G4SFD824A.C16FJ 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Crucial Technology BL16G36C16U4WL.M16FE 16GB

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V-GEN D4H8GL36A8TXV 8GB

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology BL8G32C16U4W.M8FE 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMD32GX4M4B3866C18 8GB

Corsair CMD32GX4M4B3866C18 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

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Corsair CMK16GX4M4B3200C15 4GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB