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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 13.5
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 36
    左右 -24% 更低的延时
  • 更快的写入速度，GB/s
    10.2 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 29
  • 读取速度，GB/s
    14.9 left arrow 13.5
  • 写入速度，GB/s
    9.5 left arrow 10.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 2088

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM的比较

Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston HP32D4U8S8HD-8X 8GB
Kingston HP32D4U8S8HD-8X 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
SK Hynix HMA82GR7MFR8N-UH 16GB
SK Hynix HMA82GR7MFR8N-UH 16GB
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A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-2800C15-8GVR 8GB
G Skill Intl F4-2800C15-8GVR 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M393B1K70DH0-CH9 8GB
Samsung M393B1K70DH0-CH9 8GB
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Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
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Kingston 9905700-024.A00G 8GB
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Apacer Technology 78.CAGQE.C750B 8GB
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Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
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G Skill Intl F4-3200C16-8GSXFB 8GB
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SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3200C16-8GVS 8GB
G Skill Intl F4-3200C16-8GVS 8GB
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A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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Corsair CM4X16GC3000C16K8 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Essencore Limited IM44GU48N26-FFFHM 4GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
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G Skill Intl F4-2133C15-8GFT 8GB
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