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Samsung 1600 CL10 Series 8GB
Essencore Limited IM44GU48N26-FFFHM 4GB
比较
Samsung 1600 CL10 Series 8GB vs Essencore Limited IM44GU48N26-FFFHM 4GB
总分
Samsung 1600 CL10 Series 8GB
总分
Essencore Limited IM44GU48N26-FFFHM 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
更快的读取速度,GB/s
16.1
15.9
测试中的平均数值
需要考虑的原因
Essencore Limited IM44GU48N26-FFFHM 4GB
报告一个错误
低于PassMark测试中的延时,ns
21
25
左右 -19% 更低的延时
更快的写入速度,GB/s
12.2
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Essencore Limited IM44GU48N26-FFFHM 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
21
读取速度,GB/s
16.1
15.9
写入速度,GB/s
10.1
12.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2764
3089
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Essencore Limited IM44GU48N26-FFFHM 4GB RAM的比较
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Heoriady M471A1K43CB1-CTD 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
Kingston 99P5471-016.A00LF 8GB
Kingston 99U5471-039.A00LF 8GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX2133C13D4/4GX 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A4G43AB2-CVF 32GB
Kingston KVR16N11/8-SP 8GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M471B1G73DB0-YK0 8GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Samsung M3 78T2863QZS-CF7 1GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-4400C18-8GTZR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9965640-008.A01G 32GB
Kingston 9905403-447.A00LF 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Essencore Limited KD4AGS88C-26N1900 16GB
报告一个错误
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Bug description
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