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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M474A1G43DB0-CPB 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Samsung M474A1G43DB0-CPB 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 6.8
    测试中的平均数值
Samsung M474A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M474A1G43DB0-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 36
    左右 -33% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M474A1G43DB0-CPB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 27
  • 读取速度，GB/s
    14.9 left arrow 9.7
  • 写入速度，GB/s
    9.5 left arrow 6.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 1767

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Samsung M474A1G43DB0-CPB 8GB RAM的比较

Corsair CM5S16GM4800A40N2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SK Hynix HMA42GR7MFR4N-TFTD 16GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
Nanya Technology M2F4G64CB8HG4N-CG 4GB
Nanya Technology M2F4G64CB8HG4N-CG 4GB
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SK Hynix HMA82GU7AFR8N-UH 16GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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G Skill Intl F4-3200C15-8GTZSK 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
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内存RAM
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Kingston 9965596-023.B01G 8GB
内存RAM