Samsung M393B1G70BH0-CK0 8GB vs SK Hynix HMA42GR7MFR4N-TFTD 16GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

SK Hynix HMA42GR7MFR4N-TFTD 16GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

更快的读取速度，GB/s

9.8 8.9

测试中的平均数值

SK Hynix HMA42GR7MFR4N-TFTD 16GB

需要考虑的原因
SK Hynix HMA42GR7MFR4N-TFTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 51

左右 -55% 更低的延时
更快的写入速度，GB/s

8.3 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 33
读取速度，GB/s

9.8 8.9
写入速度，GB/s

8.1 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 1946

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4SFS824A.M8FH 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Avant Technology J642GU42J5213N2 16GB

Avant Technology J642GU42J5213N2 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

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G Skill Intl F4-4000C16-16GTRSA 16GB

Kingston 9905471-001.A01LF 2GB

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Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB