Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Transcend Information TS2GSH64V4B 16GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Transcend Information TS2GSH64V4B 16GB

Transcend Information TS2GSH64V4B 16GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

Transcend Information TS2GSH64V4B 16GB

需要考虑的原因
Transcend Information TS2GSH64V4B 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 -44% 更低的延时
更快的读取速度，GB/s

15.3 14.9

测试中的平均数值
更快的写入速度，GB/s

11.4 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Transcend Information TS2GSH64V4B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 25
读取速度，GB/s

14.9 15.3
写入速度，GB/s

9.5 11.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2292 2681

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B1G73DB0-CK0 8GB

Samsung M378B1G73DB0-CK0 8GB

Samsung M378B1G73EB0-YK0 8GB

Samsung M378B1G73EB0-YK0 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Kingston KF2666C13D4/8GX 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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