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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
比较
Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
总分
Nanya Technology M2X4G64CB8HG9N-DG 4GB
总分
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
需要考虑的原因
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
36
左右 -20% 更低的延时
更快的读取速度,GB/s
15.6
14.9
测试中的平均数值
更快的写入速度,GB/s
11.8
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
30
读取速度,GB/s
14.9
15.6
写入速度,GB/s
9.5
11.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2292
2341
Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较
Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston MSI24D4U7S8MB-8 8GB
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Kingston 9905471-071.A00LF 8GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMV8GX4M1A2133C15 8GB
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-3600C18-8GVK 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KHX2133C14S4/16G 16GB
Kingston 9905471-001.A01LF 2GB
Kingston 9965640-035.C00G 32GB
报告一个错误
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Bug description
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