Nanya Technology M2Y51264TU88B0B-3C 512MB vs Crucial Technology BLE16G4D30AEEA.K16FB 16GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 18.9

测试中的平均数值

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

需要考虑的原因
Crucial Technology BLE16G4D30AEEA.K16FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

20 54

左右 -170% 更低的延时
更快的写入速度，GB/s

12.6 1,308.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 20
读取速度，GB/s

3,573.5 18.9
写入速度，GB/s

1,308.1 12.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

371 3244

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5403-492.A00LF 8GB

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G Skill Intl F4-3600C19-16GSXW 16GB

Corsair CMV4GX3M1B1600C11 4GB

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Corsair CMK128GX4M8Z2933C16 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB