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Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
比较
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Crucial Technology CT8G4SFRA266.M8FRS 8GB
总分
Nanya Technology M2Y51264TU88B0B-3C 512MB
总分
Crucial Technology CT8G4SFRA266.M8FRS 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
更快的读取速度,GB/s
3
16.1
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFRA266.M8FRS 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
54
左右 -59% 更低的延时
更快的写入速度,GB/s
13.1
1,308.1
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
54
34
读取速度,GB/s
3,573.5
16.1
写入速度,GB/s
1,308.1
13.1
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
371
3047
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB RAM的比较
Samsung M378A1G43EB1-CPB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK16GX4M4B3000C15 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston CBD32D4S2S1ME-8 8GB
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Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
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Corsair CMZ16GX3M2A2400C10 8GB
Kingston MSI26D4S9S8ME-8 8GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Corsair CMSO4GX3M1C1600C11 4GB
Kingston 9905598-026.A00G 16GB
Samsung M393B1K70QB0-CK0 8GB
Samsung SF4641G8CKHI6DFSDS 8GB
Crucial Technology CT25664AA800.M16FM 2GB
SK Hynix HMA84GR7MFR4N-TF 32GB
G Skill Intl F5-6400J3239G16G 16GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
报告一个错误
×
Bug description
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