RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
比较
Nanya Technology M2X4G64CB8HG5N-DG 4GB vs Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
总分
Nanya Technology M2X4G64CB8HG5N-DG 4GB
总分
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
报告一个错误
低于PassMark测试中的延时,ns
30
39
左右 -30% 更低的延时
更快的读取速度,GB/s
16.4
13.7
测试中的平均数值
更快的写入速度,GB/s
13.4
9.7
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
30
读取速度,GB/s
13.7
16.4
写入速度,GB/s
9.7
13.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2431
3188
Nanya Technology M2X4G64CB8HG5N-DG 4GB RAM的比较
Samsung M378B5673EH1-CF8 2GB
AMD R538G1601U2S 8GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB RAM的比较
Corsair CMSX32GX4M2A3200C22 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4X16GE2400C14K4 16GB
Samsung M395T2863QZ4-CF76 1GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Team Group Inc. DDR4 3600 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Samsung M395T5160QZ4-CE66 2GB
Kingston 9965600-012.A01G 16GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
Kingston 39P5429-006.AO01 2GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK64GX4M4D3000C16 16GB
Crucial Technology CT51264BF160B.M16F 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Panram International Corporation W4U3200PS-16G 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C14-8GTZRX 8GB
报告一个错误
×
Bug description
Source link