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Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 99U5625-015.A00G 16GB
比较
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Kingston 99U5625-015.A00G 16GB
总分
Nanya Technology M2Y51264TU88B0B-3C 512MB
总分
Kingston 99U5625-015.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
低于PassMark测试中的延时,ns
54
84
左右 36% 更低的延时
更快的读取速度,GB/s
3
14.4
测试中的平均数值
需要考虑的原因
Kingston 99U5625-015.A00G 16GB
报告一个错误
更快的写入速度,GB/s
7.2
1,308.1
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 99U5625-015.A00G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
54
84
读取速度,GB/s
3,573.5
14.4
写入速度,GB/s
1,308.1
7.2
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
371
1614
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Kingston 99U5625-015.A00G 16GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 99U5625-015.A00G 16GB
Corsair CMK16GX4M1Z3600C18 16GB
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SK Hynix HMT42GR7AFR4A-PB 16GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
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Samsung M378A2G43MB1-CTD 16GB
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A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-4000C19-8GTZ 8GB
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G Skill Intl F4-3600C14-16GTZRA 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Kingston KHX1866C9D3/8GX 8GB
Asgard VMA45UG-MIC1U22T2 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
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Kingston 9905471-071.A00LF 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Qimonda 64T128020EDL2.5C2 1GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Samsung M471B5173BH0-CK0 4GB
Samsung M378A4G43MB1-CTD 32GB
报告一个错误
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Bug description
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